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| FGA180N33AT 330V, 180A PDP Trench IGBT April 2008 FGA180N33AT 330V, 180A PDP Trench IGBT Features * High Current Capability * Low saturation voltage: VCE(sat) =1.03V @ IC = 40A * High input impedance * RoHS compliant tm General Description Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Applications PDP SYSTEM C G TO-3P G CE E Absolute Maximum Ratings Symbol VCES VGES IC IC pulse (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC Ratings 330 30 180 450 390 156 -55 to +150 -55 to +150 300 Units V V A A W W o o o @ TC = 25oC @ TC = 25oC @ TC = 100 C o C C C Notes: 1: Repetitive test, pulse width = 100usec, Duty = 0.1 * IC_pulse limited by max Tj Thermal Characteristics Symbol RJC(IGBT) RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 0.32 40 Units o o C/W C/W (c)2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA180N33AT Rev. A FGA180N33AT 330V, 180A PDP Trench IGBT Package Marking and Ordering Information Packaging Device Marking FGA180N33AT Device FGA180N33ATTU Package TO-3P Type Tube Qty per Tube 30ea Max Qty per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ICES IGES TC = 25C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 330 - - 250 400 V A nA On Characteristics VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE IC = 40A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 180A, VGE = 15V, IC = 180A, VGE = 15V TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 3880 305 180 pF pF pF 2.5 4.0 1.1 1.68 1.89 5.5 1.4 V V V V Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 200V, IC = 40A, VGE = 15V VCC = 200V, IC = 40A, RG = 5, VGE = 15V, Resistive Load, TC = 125oC VCC = 200V, IC = 40A, RG = 5, VGE = 15V, Resistive Load, TC = 25oC 27 80 108 180 26 75 112 250 169 22 69 240 300 ns ns ns ns ns ns ns ns nC nC nC FGA180N33AT Rev. A 2 www.fairchildsemi.com FGA180N33AT 330V, 180A PDP Trench IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 200 TC = 25 C 20V o Figure 2. Typical Output Characteristics 200 TC = 125 C o 10V 10V 9V 8V Collector Current, IC [A] 150 15V 12V Collector Current, IC [A] 9V 8V 20V 150 15V 12V 100 7V 100 7V 50 VGE = 6V 50 VGE = 6V 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 Figure 3. Typical Saturation Voltage Characteristics 200 Common Emitter VGE = 15V Figure 4. Transfer Characteristics 200 Common Emitter VCE = 20V Collector Current, IC [A] Collector Current, IC [A] 150 TC = 25 C TC = 125 C o o TC = 25 C o 150 T = 125oC C 100 100 50 50 0 0 1 2 Collector-Emitter Voltage, VCE [V] 3 0 2 4 6 8 Gate-Emitter Voltage,VGE [V] 10 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.1 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V Figure 6. Saturation Voltage vs. VGE 20 Common Emitter Collector-Emitter Voltage, VCE [V] 1.8 180A TC = 25 C o 16 1.5 90A 12 1.2 40A 8 180A 90A 40A IC = 20A 0.9 IC = 20A 4 0.6 25 50 75 100 125 150 o Collector-EmitterCase Temperature, TC [ C] 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGA180N33AT Rev. A 3 www.fairchildsemi.com FGA180N33AT 330V, 180A PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter TC = 125 C o Figure 8. Capacitance Characteristics 6000 Common Emitter VGE = 0V, f = 1MHz Cies TC = 25 C o Collector-Emitter Voltage, VCE [V] 16 Capacitance [pF] 4000 12 8 180A 40A 90A 2000 Coes Cres 4 IC = 20A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 0 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Gate charge Characteristics 15 Common Emitter o Figure 10. SOA Characteristics 1000 IC MAX (Pulse) 10s Gate-Emitter Voltage, VGE [V] TC = 25 C Collector Current, Ic [A] 12 VCC = 100V 200V 100 100s 1ms 10ms 9 10 IC MAX (Continuous) DC Operation 6 1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 3 0 0 30 60 90 120 Gate Charge, Qg [nC] 150 180 0.1 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 11. Turn-on Characteristics vs. Gate Resistance 500 Figure 12. Turn-off Characteristics vs. Gate Resistance 5000 Common Emitter VCC = 200V, VGE = 15V IC = 40A o TC = 25 C o TC = 125 C td(off) Switching Time [ns] Switching Time [ns] 100 tr 1000 td(on) Common Emitter VCC = 200V, VGE = 15V IC = 40A TC = 25 C TC = 125 C o o tf 10 0 20 40 60 80 100 Gate Resistance, RG [] 100 70 0 20 40 60 80 Gate Resistance, RG [] 100 FGA180N33AT Rev. A 4 www.fairchildsemi.com FGA180N33AT 330V, 180A PDP Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 2000 Common Emitter VGE = 15V, RG = 5 o TC = 25 C o TC = 125 C Figure 14. Turn-off Characteristics vs. Collector Current 1000 1000 Switching Time [ns] tf Switching Time [ns] 100 td(off) tr td(on) Common Emitter VGE = 15V, RG = 5 o TC = 25 C o TC = 125 C 100 10 30 60 90 120 Collector Current, IC [A] 150 180 1 10 30 60 90 120 150 Collector Current, IC [A] 180 Figure 15. Turn off Switching SOA Characteristics 500 Collector Current, IC [A] 100 10 Safe Operating Area 1 1 VGE = 15V, TC = 125 C o 10 100 Collector-Emitter Voltage, VCE [V] 400 FGA180N33AT Rev. A 5 www.fairchildsemi.com FGA180N33AT 330V, 180A PDP Trench IGBT Typical Performance Characteristics Figure 16.Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGA180N33AT Rev. A 6 www.fairchildsemi.com FGA180N33AT 330V, 180A PDP Trench IGBT Mechanical Dimensions TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters FGA180N33AT Rev. A 7 www.fairchildsemi.com FGA180N33AT 330V, 180A PDP Trench IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FGA180N33AT Rev. A 8 www.fairchildsemi.com |
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